Silicon carbide (SiC) is a synthetic non-oxide technical ceramic built from covalently bonded silicon and carbon. It combines diamond-class hardness, a thermal conductivity rivaling many metals, and chemical inertness across most acids and bases, which makes it the default choice where alumina or stainless steel cannot survive the combination of abrasion, heat, and corrosion. The same compound serves three distinct industries: it is the workhorse abrasive grit invented in 1891, the structural ceramic behind mechanical seal faces and kiln furniture, and the wide-bandgap semiconductor behind modern electric-vehicle power electronics.
This page covers SiC as an engineering bulk ceramic. The properties an engineer actually buys, density, flexural strength, hardness, thermal conductivity, and corrosion limits, depend heavily on the production route, so the grade designations SSiC, SiSiC, NSiC and RSiC matter more than the chemical formula. The chapters below decode those grades, their spec sheets, and the selection logic for wear, corrosion, and high-temperature service.
This guide is written for procurement engineers and design engineers specifying silicon carbide components. It runs six chapters, from what SiC is and its scale, through grade classification, sintering technologies, materials and corrosion behavior, spec-sheet decoding, to grade selection, with 7 selection FAQs. Property values reference manufacturer datasheets (Saint-Gobain Hexoloy, Schunk, Syalons, IPS Ceramics) cross-checked against MatWeb and MakeItFrom aggregates, with test methods drawn from the ASTM C1161 / C1421 / C1327 and ISO 14704 advanced-ceramics series.
Chapter 1 / 06
What is Silicon Carbide Ceramic
Silicon carbide is a compound of silicon and carbon, formula SiC, in which each atom is bonded tetrahedrally to four atoms of the other element by predominantly covalent bonds. That bond structure, very similar to diamond, is the root of every engineering property: it gives SiC its extreme hardness, its high elastic stiffness near 400 GPa, its chemical stability, and its ability to conduct heat far better than oxide ceramics. Unlike alumina or zirconia, SiC is a non-oxide ceramic, so it does not rely on an oxygen-metal lattice and behaves very differently in oxidizing and reducing atmospheres.
The compound is almost entirely synthetic. American inventor Edward Goodrich Acheson produced it in 1891 while trying to make artificial diamond by heating a mixture of clay and coke, and patented the resulting abrasive, which he branded Carborundum, in 1893. The natural mineral form, moissanite, was identified by Henri Moissan in 1893 in meteorite fragments and is vanishingly rare on Earth. The Acheson process, heating silica sand and carbon in an electric resistance furnace above 2000 degrees Celsius so that they react to SiC and carbon monoxide, is still the basis of bulk SiC grit production more than a century later.
Engineers meet SiC in three roles that should not be confused. As loose abrasive grit it is the second most common synthetic abrasive after fused alumina, used in sandpaper, grinding wheels, and lapping compounds. As a bulk structural ceramic, the focus of this page, the grit is milled to fine powder and consolidated into dense components: seal rings, bearings, nozzles, kiln furniture, heat-exchanger tubes, and ballistic armor tiles. As an electronic material, single-crystal SiC (most often the 4H polytype) is a wide-bandgap semiconductor used for high-voltage MOSFETs and Schottky diodes in electric-vehicle inverters and grid power electronics.
SiC is polymorphic: it crystallizes in more than 200 polytypes that differ only in stacking sequence. Practically, two families matter. The cubic beta phase (3C-SiC) forms below about 2000 degrees Celsius and is the starting powder for many sintered bodies. The hexagonal and rhombohedral alpha phases, chiefly the 4H, 6H, and 15R polytypes, form at higher temperatures and dominate Acheson grit. During sintering, boron and carbon additives promote elongated 6H and 4H grains, and that acicular grain growth is one mechanism that raises the fracture toughness of dense SiC.
The market scale reflects this dual identity. Industry analysts put the global silicon carbide market in the range of roughly 5.5 to 6.3 billion US dollars in 2024 to 2025, with growth driven hardest by SiC power devices for electric vehicles and renewable-energy converters, while the older abrasive and refractory segments remain large and stable. For a buyer, the practical takeaway is that the same three-letter compound spans a price range of several orders of magnitude, from cents per kilogram for crushed abrasive grit to thousands of dollars for a polished semiconductor wafer, and the bulk technical-ceramic components covered here sit in the middle of that band.
Chapter 2 / 06
Grades and Classification
The single most important decision in specifying a SiC component is the production route, because it sets the residual phases, porosity, and therefore the corrosion limit, temperature ceiling, and achievable size. The trade names vary by maker (Hexoloy SA, CarSIK-SD, Sycarb 10, EKasic), but they map onto four mainstream routes plus two specialty routes. The table below summarizes the four mainstream grades; values are representative datasheet figures and span the range across manufacturers.
Grade
Free Si / Porosity
Max Service Temp
Flexural Strength
Thermal Conductivity
Typical Use
SSiC (sintered)
0% free Si, ~0% porosity
~1600 °C
390 to 450 MPa
110 to 150 W/m·K
Seal faces, bearings, chemical and high-temp parts
SiSiC / RBSiC (reaction-bonded)
8 to 15% free Si, ~0% porosity
~1350 to 1380 °C
280 to 420 MPa
110 to 200 W/m·K
Burner and radiant tubes, kiln furniture, large wear parts
Sintered silicon carbide (SSiC) is the reference grade. Fine SiC powder is mixed with small amounts of boron and carbon and pressureless-sintered above 2000 degrees Celsius until it densifies to better than 98 percent of theoretical density with no free silicon and essentially zero porosity. The result is a single-phase polycrystalline body that holds its strength to the highest temperatures and resists the broadest range of chemistry. Saint-Gobain Hexoloy SA, Schunk CarSIK-SD, and Syalons Sycarb 10 are representative SSiC products. The penalty is cost and the difficulty of forming large or intricate shapes, because the part shrinks roughly 17 to 20 percent during sintering.
Reaction-bonded silicon carbide (SiSiC, also written RBSiC or SiC-Si) is the volume workhorse for large parts. A porous preform of SiC grains and carbon is infiltrated with molten silicon near 1450 degrees Celsius; the silicon reacts with the carbon to grow new SiC and the remaining 8 to 15 percent void space stays filled with free silicon. Because reaction bonding happens near net shape with almost no shrinkage, very large and geometrically complex components, radiant tubes meters long, kiln beams, pump volutes, become practical. The free silicon, however, melts at 1414 degrees Celsius, capping service around 1350 to 1380 degrees Celsius, and is the weak point for alkali and hydrofluoric-acid corrosion.
Nitride-bonded SiC (NSiC) binds coarse SiC grains in a silicon nitride matrix formed by nitriding silicon metal. It carries appreciable porosity, so its thermal conductivity is much lower than dense grades, but it offers excellent thermal-shock resistance and dimensional stability up to about 1470 degrees Celsius, which suits kiln furniture and the immersion tubes used in hot-dip zinc galvanizing. Recrystallized SiC (RSiC) is fired at 2300 to 2500 degrees Celsius so that fine SiC particles evaporate and re-condense to bond coarse grains, leaving a pure single-phase body with 11 to 15 percent open porosity. RSiC tolerates the highest temperatures, near 1650 degrees Celsius, and its open structure suits kiln furniture and wall-flow diesel particulate filters.
Two specialty routes complete the family. CVD-SiC deposits ultra-pure (better than 99.9995 percent) fully dense SiC by chemical vapor deposition for semiconductor wafer-handling parts, optics, and diffusion-furnace components. SiC-SiC ceramic-matrix composites reinforce a SiC matrix with continuous SiC fibers to add damage tolerance, and are standardized under ASTM C1793 and C1835 for nuclear fuel cladding and aerospace hot-section parts. Both sit well above the price of bulk structural grades and are specified only when their unique attributes are required.
Chapter 3 / 06
Sintering Technologies and Microstructure
SiC is one of the hardest materials to densify because its strong covalent bonds give it very low self-diffusion, so it does not flow and fill pores the way oxide ceramics do under heat alone. Every production route is a different answer to that problem, and the answer dictates the microstructure that an engineer ultimately relies on. The table below compares the consolidation methods behind the grades introduced in Chapter 2.
Process
Densification Mechanism
Process Temp
Resulting Density
Trade-off
Pressureless sintering (SSiC)
Solid-state, boron + carbon additives
2000 to 2150 °C
>98% theoretical, ~3.10 to 3.15 g/cm³
High shrinkage (~18%), size limited
Reaction bonding (SiSiC)
Molten Si infiltration of C preform
~1450 °C
Full density, ~3.05 to 3.10 g/cm³
Leaves 8 to 15% free Si
Nitride bonding (NSiC)
Si nitrided to Si3N4 bond phase
~1400 to 1450 °C
~2.7 to 2.85 g/cm³, porous
Lower strength and conductivity
Recrystallization (RSiC)
Evaporation-condensation neck growth
2300 to 2500 °C
~2.6 g/cm³, 11 to 15% open pores
Porous, lower strength
Hot pressing / HIP (HPSiC)
Pressure-assisted sintering
~1900 to 2000 °C + pressure
Near 100% theoretical
Simple shapes only, high cost
Pressureless solid-state sintering is the breakthrough that made dense SiC economic. Work in the 1970s established that submicron SiC powder doped with roughly 0.3 to 1 percent boron (often as boron carbide) plus 1 to 2 percent carbon could be sintered without applied pressure to better than 95 percent of theoretical density in a few minutes at 1900 to 2100 degrees Celsius. The boron and carbon suppress surface diffusion that would otherwise coarsen the powder, and promote grain-boundary diffusion that closes porosity. This route underlies most commercial SSiC and, because it needs no die pressure, allows complex pressed and slip-cast shapes.
Reaction bonding sidesteps the densification problem entirely: instead of forcing SiC powder to flow, it grows new SiC in place by chemical reaction. A preform of SiC grains and carbon, formed by casting or pressing, is wicked full of molten silicon; the silicon reacts exothermically with the free carbon to precipitate fresh beta-SiC that bridges the original grains, and capillary action draws silicon into every remaining pore. Because the part barely changes dimension, tolerances are good and parts can be large, but the residual silicon is permanent and defines the grade's chemical and thermal limits.
The microstructure that results from each route is what the spec sheet ultimately measures. SSiC is a uniform single phase of equiaxed-to-acicular SiC grains 4 to 10 micrometers across with isolated pores, which gives high and reproducible strength described by a Weibull modulus typically of 10 to 15. SiSiC shows a continuous SiC skeleton threaded by silicon-filled channels; the silicon raises thermal conductivity but lowers high-temperature strength and chemical resistance. Recrystallized RSiC is a coarse, openly porous network ideal for thermal cycling but weak in bending. Grain size, porosity, and the amount and distribution of free silicon are the three microstructural variables a buyer should ask a supplier to quantify, because two parts labeled "silicon carbide" can differ enormously.
Toughness deserves a note. SiC, like all monolithic ceramics, is brittle: its fracture toughness of roughly 3.4 to 4.6 MPa square-root-metre is a fraction of any metal, so it fails suddenly rather than yielding. Designers cannot rely on plastic deformation as a safety margin and instead design to keep tensile stress low, use generous radii, and avoid point loads and thermal gradients. Where damage tolerance is mandatory, the SiC-SiC fiber composite route is chosen specifically to add a graceful, non-catastrophic failure mode that monolithic SiC cannot provide.
Chapter 4 / 06
Corrosion, Wear and Oxidation Behavior
SiC is selected when a part must survive abrasion, corrosion, and heat simultaneously, so its service behavior in each of those domains, and how that behavior depends on grade, is the heart of any application decision. The general rule is that single-phase SSiC and RSiC are chemically robust because they contain only SiC, whereas the free silicon in SiSiC is a deliberate compromise that buys formability at the cost of some chemical and thermal headroom.
Acid and base corrosion. Sintered SSiC is among the most corrosion-resistant of all technical ceramics. With no free silicon and no glassy grain-boundary phase, it withstands strong oxidizing and reducing acids, including sulfuric, nitric, and hydrochloric, and most caustic solutions over a wide temperature range, conditions that destroy stainless steel and attack alumina. The well-known exceptions are hydrofluoric acid and hot concentrated alkalis, which dissolve the protective surface silica. Reaction-bonded SiSiC is more vulnerable: its free silicon phase is leached by strong alkalis, by hydrofluoric acid, and by nitric-hydrofluoric mixtures, so HF or molten-caustic duty mandates a free-silicon-free SSiC grade and a manufacturer corrosion chart for the exact concentration and temperature.
Oxidation at high temperature. In air, SiC oxidizes slowly because a thin, adherent silica film forms on the surface and acts as a diffusion barrier; this passive oxidation is what allows SSiC to be used continuously near 1600 degrees Celsius. The danger is active oxidation, which occurs in low-oxygen, reducing, or wet atmospheres above roughly 1300 degrees Celsius: instead of solid silica, gaseous silicon monoxide forms and carries material away, with no protective film. The practical lesson for a furnace or burner application is that the rated temperature is only valid for the rated atmosphere, and a reducing or steam-laden environment can drop the safe ceiling by hundreds of degrees.
Wear and erosion. SiC hardness of roughly 2500 to 2900 Knoop, second only to diamond and boron carbide among common materials, makes it outstanding against abrasion. It is the standard face for sandblast and slurry nozzles, for wear liners handling mineral slurry and coal, and for the mating rings of mechanical seals pumping abrasive fluids. High thermal conductivity helps here too, because it carries frictional heat out of a seal interface and resists the thermal cracking that would destroy a less conductive ceramic. For mechanical seals, self-mated SSiC against SSiC or SSiC against carbon-graphite are the workhorse pairings, and sliding-contact SP-type grades add controlled porosity that traps lubricant for marginal-lubrication and dry-running conditions.
The table below is a quick orientation for media versus recommended SiC grade. It is a starting point only; before committing, obtain the manufacturer corrosion chart and confirm concentration, temperature, and flow velocity, because corrosion of the silica film is strongly concentration and temperature dependent.
Service / Media
Recommended SiC Grade
Avoid
Strong acids (H2SO4, HNO3, HCl)
SSiC (single phase)
NSiC (porous bond phase)
Hydrofluoric acid / hot strong alkali
SSiC, confirmed free-Si-free
SiSiC (free silicon attacked)
Abrasive slurry, sandblast nozzle
SSiC or SiSiC
NSiC, porous grades
Mechanical seal face, abrasive pump
SSiC self-mated or vs carbon
Reaction-bonded for HF duty
Large radiant / burner tube to 1350 °C
SiSiC (near-net forming)
SSiC (size and cost)
Kiln furniture, thermal cycling to 1470 °C
NSiC or RSiC
SiSiC above 1380 °C
Diesel particulate filter, high-temp filtration
RSiC (open porosity)
Dense SSiC (no flow path)
Chapter 5 / 06
Key Specification Parameters
A SiC datasheet typically lists a dozen properties, but only a handful drive a purchase decision, and each must be read together with the test method behind it, because a three-point and a four-point bending result for the same material can differ by 10 to 20 percent. The table below gives representative ranges for dense sintered SSiC, the reference grade; reaction-bonded and porous grades shift these numbers as noted in earlier chapters.
Property
Typical SSiC Value
Unit
Test Method
Density
3.10 to 3.15
g/cm³
ASTM C20 / Archimedes
Flexural strength (MOR)
390 to 450
MPa
ASTM C1161 / ISO 14704
Compressive strength
2800 to 3900
MPa
ASTM C1424
Young's modulus
400 to 410
GPa
ASTM C1259
Fracture toughness (K1c)
3.4 to 4.6
MPa·m½
ASTM C1421
Hardness (Knoop)
2500 to 2900
HK
ASTM C1326
Thermal conductivity (25 °C)
110 to 150
W/m·K
ASTM E1461 (laser flash)
Thermal expansion (CTE)
4.0 to 4.5
10⁻⁶/K
ASTM E228
Max use temp (air)
~1600
°C
grade dependent
Poisson's ratio
0.14 to 0.21
—
ASTM C1259
Flexural strength (modulus of rupture) is the headline mechanical number, reported in MPa from a four-point or three-point bend bar. Because ceramics are flaw-sensitive, a single strength value is misleading without context: the same SSiC quoted at 450 MPa in three-point bending may read lower in the more conservative four-point geometry, and a larger part contains larger flaws and so tests weaker. Always confirm both the test method (ASTM C1161 or ISO 14704) and the specimen size when comparing suppliers.
Weibull modulus quantifies how scattered the strength is, and for brittle ceramics it is as important as the mean strength. A dense SSiC typically shows a Weibull modulus of 10 to 15: the higher the value, the tighter the strength distribution and the more reliably a designer can apply a safety factor. A high mean strength with a low Weibull modulus means a wide spread and unpredictable weak parts, which is dangerous in load-bearing service. Request the Weibull data, not just the average, for any structural application.
Hardness and fracture toughness must be read as a pair. SiC's Knoop hardness of 2500 to 2900 explains its wear performance, but its fracture toughness of only 3.4 to 4.6 MPa square-root-metre explains its brittleness. This is the central trade-off of all hard ceramics: hardness buys wear life but the low toughness means the part shatters rather than dents on overload or impact, which is why SiC armor needs a ductile backing layer and why seal faces need careful handling and chamfered edges.
Thermal conductivity and expansion together govern thermal-shock survival. SiC's conductivity of 110 to 150 W per metre kelvin is exceptional for a ceramic, comparable to many steels and roughly five times that of alumina, so heat moves out of a hot zone before steep gradients build up. Combined with a low expansion coefficient near 4 parts per million per kelvin, this gives SiC excellent resistance to thermal shock and to the face distortion that ruins a mechanical seal. Reaction-bonded SiSiC can read even higher conductivity, up to about 200 W per metre kelvin, because of its continuous silicon phase. Maximum use temperature is grade and atmosphere dependent, as Chapter 4 detailed, and should never be taken from the headline number alone.
Chapter 6 / 06
Grade Selection Decision Factors
Translating the preceding chapters into a specific grade and supplier follows a fixed order. Most selection failures come not from one wrong number but from deciding geometry or price before the chemistry and temperature limits have been pinned down. Work the steps below in sequence and the field of candidate grades narrows naturally.
Chemistry first: Identify every fluid the part will contact and its concentration and temperature. Any hydrofluoric acid, nitric-hydrofluoric mixture, or hot strong alkali forces a single-phase, free-silicon-free SSiC and eliminates reaction-bonded SiSiC. For broad acid and base resistance, SSiC is the safe default.
Temperature and atmosphere: Match the continuous and peak temperatures to the grade ceiling, and check the atmosphere. SiSiC is capped near 1350 to 1380 degrees Celsius by its free silicon; SSiC reaches about 1600 degrees Celsius and RSiC about 1650 degrees Celsius in air. Reducing, wet, or low-oxygen atmospheres above 1300 degrees Celsius risk active oxidation and lower every ceiling.
Geometry and size: Large, long, or geometrically complex parts (radiant tubes, kiln beams, pump volutes) favour reaction-bonded SiSiC because it forms near net shape with little shrinkage. Small precision components (seal rings, bearings, nozzle inserts) favour pressureless-sintered SSiC, which holds tight tolerances after grinding.
Wear pairing and surface finish: For seals and bearings, decide the counterface (self-mated SiC, SiC against carbon-graphite) and the required surface finish and flatness. For dry-running or marginal-lubrication seals, specify a sliding-contact SP-type grade with engineered porosity that carries lubricant.
Mechanical reliability: For load-bearing parts request both the mean flexural strength and the Weibull modulus, the test method (ASTM C1161 vs ISO 14704), and the fracture toughness, then design to keep tensile stress well below the rated value with generous radii and no point loads.
Filtration or porosity needs: If the function requires flow through the wall (diesel particulate filter, hot-gas filter, sparger) choose a porous grade such as RSiC and specify pore size and permeability, not just strength.
Standards and documentation: Reference the relevant test methods so quotes are comparable: ASTM C1161 / ISO 14704 for strength, C1421 for toughness, C1327 / C1326 for hardness, C1239 for Weibull statistics, and C1793 / C1835 for SiC-SiC composites. Request the manufacturer datasheet, the corrosion chart for your media, and certificates of conformity.
Cost and lead time: Reaction-bonded SiSiC is usually cheaper to form near net shape and has shorter lead times for large parts; SSiC commands a premium for chemistry and high-temperature duty; CVD-SiC and SiC-SiC composites are specialty-priced and reserved for semiconductor and nuclear or aerospace needs.
A final dimension that buyers often overlook is manufacturer serviceability: the ability to grind and lap to final tolerance in-house, to braze or shrink-fit SiC into metal housings, to supply matched seal-face pairs, and to hold consistent grade properties batch to batch. Established suppliers such as Saint-Gobain (Hexoloy), Schunk, Kyocera, CoorsTek, Syalons, and IPS Ceramics maintain documented datasheets, test traceability, and finishing capability, which matters far more over a ten-year production run than a small unit-price difference at the quotation stage.
FAQ
What is the difference between sintered (SSiC) and reaction-bonded (SiSiC) silicon carbide?
Sintered silicon carbide (SSiC) is densified from fine SiC powder with boron and carbon additives by pressureless sintering above 2000 degrees Celsius, producing a single-phase body with essentially zero free silicon, near-zero porosity, and the best corrosion and high-temperature performance. Reaction-bonded silicon carbide (SiSiC, also called RBSiC) infiltrates a porous SiC-and-carbon preform with molten silicon near 1450 degrees Celsius: the silicon reacts with carbon to form new SiC and the remaining pores are filled with 8 to 15 percent residual free silicon. SiSiC sinters near net shape with little shrinkage, allowing large and complex parts, but the free silicon caps its useful temperature near 1350 to 1380 degrees Celsius and is attacked by strong alkalis and hydrofluoric acid. SSiC is the choice for chemistry and very high temperature; SiSiC is the choice for large geometry and cost.
How hard is silicon carbide compared with tungsten carbide and alumina?
Silicon carbide has a Knoop hardness of roughly 2500 to 2900 (about 25 to 28 GPa on the Vickers scale) and ranks about 9.2 to 9.5 on the Mohs scale, placing it just below diamond and boron carbide. It is markedly harder than alumina (around 1500 to 1800 Knoop) and clearly harder than sintered tungsten carbide cobalt (around 1300 to 1800 HV depending on cobalt content and grain size). That hardness, combined with high stiffness, is why SiC is the dominant material for abrasive grit, sandblast and slurry nozzles, and the mating faces of mechanical seals handling abrasive media.
What is the maximum service temperature of silicon carbide ceramic?
It depends on the grade and atmosphere. Sintered SSiC can be used continuously to roughly 1600 degrees Celsius in air because a protective silica layer forms on the surface (passive oxidation). Recrystallized RSiC, which is single-phase SiC with open porosity, serves to about 1650 degrees Celsius and is favoured for kiln furniture. Reaction-bonded SiSiC is limited to about 1350 to 1380 degrees Celsius because the free silicon melts at 1414 degrees Celsius. Nitride-bonded NSiC works to about 1470 degrees Celsius. In reducing or wet atmospheres above roughly 1300 degrees Celsius, active oxidation can volatilize the silica film and accelerate loss, so always confirm the rating against the actual furnace atmosphere.
Why is silicon carbide used for mechanical seal faces?
A mechanical seal face must resist abrasion, run cool, and not distort under heat. SiC delivers extreme hardness for wear life, a thermal conductivity of roughly 110 to 150 watts per metre kelvin (comparable to many steels and about five times that of alumina) to carry frictional heat away from the sliding interface, a low thermal expansion of about 4 parts per million per kelvin to limit face distortion, and chemical inertness in most acids and bases. Self-mated SiC against SiC, or SiC against carbon-graphite, are the standard pairings for pumps in chemical, mining, and water service. Sintered SSiC is preferred for the most aggressive chemistry; sliding-contact SP grades with engineered porosity carry lubricant and tolerate marginal lubrication.
Is silicon carbide resistant to acids and corrosion?
Single-phase sintered SSiC, which contains no free silicon, is one of the most corrosion-resistant technical ceramics: it withstands strong oxidizing and reducing acids and most bases over a wide temperature range, including sulfuric, nitric, and hydrochloric acids and caustic solutions where stainless steels and many other ceramics fail. The notable exceptions are hydrofluoric acid and hot concentrated alkalis, which attack the protective silica film. Reaction-bonded SiSiC is less resistant because its free silicon phase is dissolved by strong alkalis, hydrofluoric acid, and mixtures such as nitric-hydrofluoric. For HF service or molten caustic, confirm a free-silicon-free SSiC grade and request the manufacturer corrosion chart for the specific concentration and temperature.
What standards and test methods apply to silicon carbide ceramics?
Mechanical and thermal properties of advanced ceramics, including SiC, are characterized under ASTM and ISO methods rather than a single material specification. Flexural strength is measured by ASTM C1161 and ISO 14704 (four-point or three-point bending), fracture toughness by ASTM C1421, elastic modulus by ASTM C1259 (impulse excitation), Vickers and Knoop hardness by ASTM C1327 and C1326, and Weibull strength distribution by ASTM C1239. For SiC fiber reinforced SiC composites used in nuclear cladding, ASTM C1793 and C1835 apply. Because grade-to-grade values vary, procurement should reference the manufacturer datasheet and the test method used, since a three-point and four-point bending result for the same material can differ by 10 to 20 percent.
What are the main grades of silicon carbide ceramic and where is each used?
Four production routes dominate. Sintered SSiC (single-phase, near-zero porosity) is used for mechanical seal faces, bearings, and aggressive chemical and high-temperature parts. Reaction-bonded SiSiC (RBSiC, 8 to 15 percent free silicon) is used for large complex shapes such as burner and radiant tubes, kiln furniture, and wear liners where near-net forming and cost matter. Nitride-bonded NSiC (SiC grains in a silicon nitride matrix) is used for kiln furniture and zinc galvanizing immersion tubes for its thermal-shock and dimensional stability. Recrystallized RSiC (pure SiC with 11 to 15 percent open porosity) is used for high-temperature kiln furniture and diesel particulate filters. Specialty routes such as CVD-SiC and SiC-SiC composites serve semiconductor and nuclear applications respectively.